Combining a pair of materials of different structural dimensions and functional properties\ninto a hybrid material system may realize unprecedented multi-functional device applications.\nEspecially, two-dimensional (2D) materials are suitable for being incorporated into the heterostructures\ndue to their colossal area-to-volume ratio, excellent flexibility, and high sensitivity to interfacial\nand surface interactions. Semiconducting molybdenum disulfide (MoS2), one of the well-studied\nlayered materials, has a direct band gap as one molecular layer and hence, is expected to be one\nof the promising key materials for next-generation optoelectronics. Here, using lateral 2D/3D\nheterostructures composed of MoS2 monolayers and nanoscale inorganic ferroelectric thin films,\nreversibly tunable photoluminescence has been demonstrated at the microscale to be over 200%\nupon ferroelectric polarization reversal by using nanoscale conductive atomic force microscopy\ntips. Also, significant ferroelectric-assisted modulation in electrical properties has been achieved\nfrom field-effect transistor devices based on the 2D/3D heterostructrues. Moreover, it was also\nshown that the MoS2 monolayer can be an effective electric field barrier in spite of its sub-nanometer\nthickness. These results would be of close relevance to exploring novel applications in the fields of\noptoelectronics and sensor technology.
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